Zero-static power radio-frequency switches based on MoS2 atomristors

¹

,

²

,

³

et al. 2023

Abstract

Smart CitationsHow this paper cites the one you are viewing

“…The values of C ON obtained for the hBN devices are similar to the ones reported elsewhere for fabricated hBN-based MIMs, i.e., few pF [27], [28]. Furthermore, this capacitive effect at ON-state has not been observed in other 2D monolayer RF switches [4], [5] and hence it is suggested here to be associated to the charge storaged within the hBN layer during the filament-based resistive switching [15] rather than to the thickness of the monolayer as suggested elsewhere [6]. A further discussion of the intrinsic mechanism of the resisitive switching mechanism in hBN is out of the scope of this work, however, interested readers are directed to [15].…”

Section: Results

supporting

confidence: 87%

Static and Small-Signal Modeling of Radiofrequency Hexagonal Boron Nitride Switches

¹

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²

,

³

et al. 2023

Abstract

Smart CitationsHow this paper cites the one you are viewing

“…The values of C ON obtained for the hBN devices are similar to the ones reported elsewhere for fabricated hBN-based MIMs, i.e., few pF [27], [28]. Furthermore, this capacitive effect at ON-state has not been observed in other 2D monolayer RF switches [4], [5] and hence it is suggested here to be associated to the charge storaged within the hBN layer during the filament-based resistive switching [15] rather than to the thickness of the monolayer as suggested elsewhere [6]. A further discussion of the intrinsic mechanism of the resisitive switching mechanism in hBN is out of the scope of this work, however, interested readers are directed to [15].…”

Section: Results

supporting

confidence: 87%

Semiconductors and Heterogeneous Integration

Mo-4d Orbital Selectivity Induced by Disorder and Substrate–Film Interaction in Monolayer MoS2

Craco

¹

2026

Abstract

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“…-2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 It is important to note the minimal memristive behavior observed in the main panel at finite V and the ON/OFF ratio between the V = 0.0 and V = 0.8 eV results. This observation lends support to the bipolar switching with a stable low-resistance state and high-resistance state reported in extant experimental studies [6,7,15,29,[64][65][66]. Notice in the inset the good qualitative agreement between the theory curves at negative energies and that obtained by numerically integrating the dI/dV data [15].…”

Section: Theory Results and Discussion

supporting

confidence: 85%

“…Figure 8 displays the semi-logarithmic (main panel) and linear (inset) I -V characteristic curves obtained using the DFT+DMFT DOS in Figures 6 and7. As can be seen, the interplay of the lattice disorder caused the monolayer MoS 2 to exhibit memristive behavior similar to that reported in [6,7,29,[64][65][66]. In our theory, the resistance steady-state value exhibited an ON/OFF ratio as high as 10 3 .…”

Section: Theory Results and Discussion

supporting

confidence: 83%

Oxidized MoS ₂ ‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Son

¹

,

Pyo

²

,

Park

³

et al. 2026

Adv Funct Materials

Self Cite

Abstract

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“…The device exhibits stable resistance values for both the HRS and LRS over 4 × 10 4 s without any observable degradation, maintaining a high ON/OFF ratio of approximately 10 5 . This level of stability confirms the reliable non-volatile performance of the oxidized MoS 2 RRAM, demonstrating performance comparable to previously reported RF switches [45][46][47]. Furthermore, the cyclic stability was evaluated, exhibiting consistent switching behavior of 1000 consecutive cycles (Figure 2d).…”

Section: Memristive Switching Performance In Pristine and Oxidized Mos

supporting

confidence: 88%

Static and Small-Signal Modeling of Radiofrequency Hexagonal Boron Nitride Switches

¹

,

²

,

³

et al. 2023

Abstract

Smart CitationsHow this paper cites the one you are viewing

“…The values of C ON obtained for the hBN devices are similar to the ones reported elsewhere for fabricated hBN-based MIMs, i.e., few pF [27], [28]. Furthermore, this capacitive effect at ON-state has not been observed in other 2D monolayer RF switches [4], [5] and hence it is suggested here to be associated to the charge storaged within the hBN layer during the filament-based resistive switching [15] rather than to the thickness of the monolayer as suggested elsewhere [6]. A further discussion of the intrinsic mechanism of the resisitive switching mechanism in hBN is out of the scope of this work, however, interested readers are directed to [15].…”

Section: Results

supporting

confidence: 87%

Semiconductors and Heterogeneous Integration

Mo-4d Orbital Selectivity Induced by Disorder and Substrate–Film Interaction in Monolayer MoS2

Craco

¹

2026

Abstract

Smart CitationsHow this paper cites the one you are viewing

“…-2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 It is important to note the minimal memristive behavior observed in the main panel at finite V and the ON/OFF ratio between the V = 0.0 and V = 0.8 eV results. This observation lends support to the bipolar switching with a stable low-resistance state and high-resistance state reported in extant experimental studies [6,7,15,29,[64][65][66]. Notice in the inset the good qualitative agreement between the theory curves at negative energies and that obtained by numerically integrating the dI/dV data [15].…”

Section: Theory Results and Discussion

supporting

confidence: 85%

“…Figure 8 displays the semi-logarithmic (main panel) and linear (inset) I -V characteristic curves obtained using the DFT+DMFT DOS in Figures 6 and7. As can be seen, the interplay of the lattice disorder caused the monolayer MoS 2 to exhibit memristive behavior similar to that reported in [6,7,29,[64][65][66]. In our theory, the resistance steady-state value exhibited an ON/OFF ratio as high as 10 3 .…”

Section: Theory Results and Discussion

supporting

confidence: 83%

Oxidized MoS ₂ ‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Son

¹

,

Pyo

²

,

Park

³

et al. 2026

Adv Funct Materials

Self Cite

Abstract

Smart CitationsHow this paper cites the one you are viewing

“…The device exhibits stable resistance values for both the HRS and LRS over 4 × 10 4 s without any observable degradation, maintaining a high ON/OFF ratio of approximately 10 5 . This level of stability confirms the reliable non-volatile performance of the oxidized MoS 2 RRAM, demonstrating performance comparable to previously reported RF switches [45][46][47]. Furthermore, the cyclic stability was evaluated, exhibiting consistent switching behavior of 1000 consecutive cycles (Figure 2d).…”

Section: Memristive Switching Performance In Pristine and Oxidized Mos

supporting

confidence: 88%

Static and Small-Signal Modeling of Radiofrequency Hexagonal Boron Nitride Switches

¹

,

²

,

³

et al. 2023

Abstract

Smart CitationsHow this paper cites the one you are viewing

“…The values of C ON obtained for the hBN devices are similar to the ones reported elsewhere for fabricated hBN-based MIMs, i.e., few pF [27], [28]. Furthermore, this capacitive effect at ON-state has not been observed in other 2D monolayer RF switches [4], [5] and hence it is suggested here to be associated to the charge storaged within the hBN layer during the filament-based resistive switching [15] rather than to the thickness of the monolayer as suggested elsewhere [6]. A further discussion of the intrinsic mechanism of the resisitive switching mechanism in hBN is out of the scope of this work, however, interested readers are directed to [15].…”

Section: Results

supporting

confidence: 87%

Semiconductors and Heterogeneous Integration

Mo-4d Orbital Selectivity Induced by Disorder and Substrate–Film Interaction in Monolayer MoS2

Craco

¹

2026

Abstract

Smart CitationsHow this paper cites the one you are viewing

“…-2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 It is important to note the minimal memristive behavior observed in the main panel at finite V and the ON/OFF ratio between the V = 0.0 and V = 0.8 eV results. This observation lends support to the bipolar switching with a stable low-resistance state and high-resistance state reported in extant experimental studies [6,7,15,29,[64][65][66]. Notice in the inset the good qualitative agreement between the theory curves at negative energies and that obtained by numerically integrating the dI/dV data [15].…”

Section: Theory Results and Discussion

supporting

confidence: 85%

“…Figure 8 displays the semi-logarithmic (main panel) and linear (inset) I -V characteristic curves obtained using the DFT+DMFT DOS in Figures 6 and7. As can be seen, the interplay of the lattice disorder caused the monolayer MoS 2 to exhibit memristive behavior similar to that reported in [6,7,29,[64][65][66]. In our theory, the resistance steady-state value exhibited an ON/OFF ratio as high as 10 3 .…”

Section: Theory Results and Discussion

supporting

confidence: 83%

Oxidized MoS ₂ ‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Son

¹

,

Pyo

²

,

Park

³

et al. 2026

Adv Funct Materials

Self Cite

Abstract

Smart CitationsHow this paper cites the one you are viewing

“…The device exhibits stable resistance values for both the HRS and LRS over 4 × 10 4 s without any observable degradation, maintaining a high ON/OFF ratio of approximately 10 5 . This level of stability confirms the reliable non-volatile performance of the oxidized MoS 2 RRAM, demonstrating performance comparable to previously reported RF switches [45][46][47]. Furthermore, the cyclic stability was evaluated, exhibiting consistent switching behavior of 1000 consecutive cycles (Figure 2d).…”

Section: Memristive Switching Performance In Pristine and Oxidized Mos

supporting

confidence: 88%